High-power monolithic AlGaN/GaN high electron mobility transistor switches
Vincenzo Alleva, Andrea Bettidi, Walter Ciccognani, Marco De Dominicis, Mauro Ferrari, Claudio Lanzieri, Ernesto Limiti, Marco Peroni
This work presents the design, fabrication, and test of X-band and 2?18 GHz wideband high-power single pole double throw (SPDT) monolithic microwave integrated circuit (MMIC) switches in microstrip gallium nitride (GaN) technology. Such switches have demonstrated state-of-the-art performances and RF fabrication yields better than 65%. In particular, the X-band switch exhibits 1 dB insertion loss,