X-band T/R-module front-end based on GaN MMICs
Patrick Schuh, Hardy Sledzik, Rolf Reber, Andreas Fleckenstein, Ralf Leberer, Martin Oppermann, Rüdiger Quay, Friedbert van Raay, Matthias Seelmann-Eggebert, Rudolf Kiefer, Michael Mikulla
Amplifiers for the next generation of T/R modules in future active array antennas are realized as monolithically integrated circuits (MMIC) on the basis of novel AlGaN/GaN (is a chemical material description) high electron mobility transistor (HEMT) structures. Both low-noise and power amplifiers are designed for X-band frequencies. The MMICs are designed, simulated, and fabricated using a novel v