An Array-Based Design Methodology for 10 GHz SiGe LC Oscillators P. Smith1, I.G. Thayne2 2 Institute for System Level Integration, Livingston, Scotland, email: paul.smith-micrel.com Ultrafast Systems Group, Department of Electronics and Electrical Engineering, The University of Glasgow, Scotland, Tel : +44 (0)141 330 3859, Fax : +44 (0)141 330 6010, e-mail: ithayne-elec.gla.ac.uk 1 Abstract --

Performances of AlGaN/GaN HEMTs in Planar Technology M. Werquin, N. Vellas, Y. Guhel1, D. Ducatteau, B. Boudart1, J.C. Pesant, Z. Bougrioua2, M. Germain3, J.C. De Jaeger and C. Gaquière IEMN-TIGER, av Poincaré, BP 69, 59652 Villeneuve d'Ascq, France EIC-LUSAC, cite universitaire, BP 78, 50130 Cherbourg Octeville, France 2 CRHEA-CNRS, rue B. Gregory, Sophia Antipolis, 06560 Valbonne, France 3 IMEC,

An Ultra Wideband 5 W Power Amplifier Using SiC MESFETs Ahmed Sayed, Stefan von der Mark and Georg Boeck Berlin University of Technology, Microwave Engineering Group, HFT 5-1, Einsteinufer 25, 10587 Berlin, Germany, sayed-mwt.ee.tu-berlin.de, Tel. +49 30 31 42 68 95 and Fax. +49 30 31 42 68 93 Abstract-- A 5 watt wideband power amplifier using a SiC MESFET has been designed. The frequency range co

A GaAs-HBT Broadband Amplifier with Near-fT Cut-off Frequency for High-Bitrate Transmission Chafik Meliani, Matthias Rudolph, Jochen Hilsenbeck, and Wolfgang Heinrich Ferdinand-Braun-Institut für Hoechstfrequenztechnik (FBH), 12489 Berlin / Germany Email: meliani-fbh-berlin.de Abstract -- A broadband amplifier for high-bitrate transmission is presented, using a standard GaAs-HBT process with fT an

Influence of passivation on High-Power AlGaN/GaN HEMT devices at 10GHz. D.Ducatteau1, M. Werquin1, C.Gaquière1, D. Théron1, T.Martin3, E. Delos1, B. Grimbert1, E. Morvan2, N. Caillas2, V. Hoël1, J.C. De Jaeger1, S. Delage2. 1 IEMN-TIGER, UMR8520 Dept. Hyperfréquences et Semiconducteurs, Avenue Poincare, 59652 Villeneuve d'Ascq, France, Tel : 33 (0)3 20 19 79 79 2 THALES RESEARCH and TECHNOLOGY-TI

Investigation of Thermal Crunching Effects in Fishbone-Type Layout Power GaAs-HBTs M. Rudolph, F. Schnieder, W. Heinrich Ferdinand-Braun-Institut f¨ r H¨ chstfrequenztechnik (FBH), u o Gustav-Kirchhoff-Str. 4, 12489 Berlin (email rudolph-fbh-berlin.de) Abstract-- Thermal current crunching in power HBTs is investigated by numerical simulation. Compact electro-thermal models are connected in parall

Improved Performance of Flip Chip assembled MMIC Amplifiers on LTCC using a Photonic Bandgap Structure A. Ziroff*, M. Nalezinski*, W. Menzel** *Siemens Corporate Technology, Otto Hahn Ring 6, 81730 Munich, Germany **Microwave Techniques, University of Ulm, Germany Abstract -- Further cost reduction in today's microwave frontends is strongly related to assembly technology as well as module technol

A Highly Integrated GaAs pHEMT Active Mixer for Wideband SAR Systems Tom K. Johansen, Jens Vidkjær, Viktor Krozer Technical University of Denmark, Oersted-DTU, Department of Electromagnetic Systems, Oersteds Plads 348, 2800 Kgs. Lyngby, Denmark, Phone:+45-45253770, E-mail:tkj-oersted.dtu.dk IF Abstract -- This paper presents the design and performance of a GaAs pHEMT active mixer for wideband Syn

An Array-Based Design Methodology for the Realisation of 94GHz MMMIC Amplifiers K. Elgaid, H. McLelland, S.Ferguson, X. Cao, E. Boyd, D. Moran, S. Thoms, H. Zhou, C.D.W. Wilkinson, C.R. Stanley, I. G. Thayne Nanoelectronics Research Centre, Department of Electronics and Electrical Engineering University of Glasgow, Glasgow, G12 8LT, Scotland, United Kingdom Phone: + 44 141 330 6678, Fax: + 44 141

A 2 GHz Fully Balanced Switching HBT Mixer Mike Tempel, Meik Huber, Georg Boeck Technical University of Berlin, Microwave Engineering Group, Sekr. HFT5-1, Einsteinufer 25, 10587 Berlin, Germany Tel. (++49)30 314-26895, Fax (++49)30 314-26893 http://www-mwt.ee.tu-berlin.de Abstract - This paper describes a highly linear lowvoltage 2 GHz AlGaAs HBT fully balanced downconversion mixer. The circuit is