Numerically Efficient Design of Highly Linear Microwave Power Amplifiers J. A. Lonac1, A. Santarelli1, R. Paganelli2, F. Filicori1 1 University of Bologna, Department of Electronics, Viale Risorgimento 2, 40136 Bologna, Italy, e-mail: jalonac-deis.unibo.it, asantarelli-deis.unibo.it, ffilicori-deis.unibo.it 2 IEIIT-CNR - Viale Risorgimento 2, 40136 Bologna, Italy, e-mail: rpaganelli-deis.unibo.it

A new Methodology for achieving MMIC Bandpass Active Filters at High Frequencies L. Darcel1, P. Duême1, R. Funck1, G. Alquié2 Thales Airborne Systems, 2 Av. Gay Lussac, 78851 Elancourt, France Tel : +33 (0) 1 34 81 67 59, Email : laurence.darcel-fr.thalesgroup.com 2 LISIF, University Pierre and Marie Curie, 4 place Jussieu, BP252, 75252 PARIS Cedex 05, France 1 Abstract -- This paper presents a n

C Band DROs Using Microwave Bipolar Devices C.Florian* , M.Pirazzini° , G.Vannini°, A.Santarelli*, M.Borgarino , C. Angelone , M.Paparo , F.Filicori* *DEIS, University of Bologna, Bologna, 40136 Viale Risorgimento 2, Italy, cflorian-deis.unibo.it °Department of Engineering, University of Ferrara, Ferarra, 44100 Via Saragat 1, Italy, gvannini-ing.unife.it Engineering Faculty, University of Modena a

IF-noise improvement of the GaAs Schottky diodes for THz-frequency mixer applications O. Cojocari1*, S. Biber2, B. Mottet1, C. Sydlo1, H.-L. Hartnagel1 and L.-P. Schmidt2 1 2 Technical University of Darmstadt, Institut für Hochfrequenztechnik, Merckstr. 25, 64283Darmstadt, Germany * University of Erlangen-Nuremberg, Lehrstuhl für Hochfrequenztechnik, Cauerstr. 9, 91058 Erlangen, Germany Tel.: +4

Integration of components in a 50 nm InGaAsInAlAs-InP HEMT process with pseudomorphic In0.65Ga0.35As channel Anders Mellberg, Mikael Malmkvist, Jan Grahn, Niklas Rorsman, and Herbert Zirath Chalmers University of Technology, Microwave Electronics Laboratory, MC2, SE-412 96 Göteborg, Sweden, Phone +46 31 772 10 00 Abstract -- The basic active and passive elements for a 50 nm InGaAs-InAlAs-InP HEMT

Physics-Based Low-Frequency Noise Modelling in Small- and Large-Signal RF Device Operation G. Conte, S. Donati Guerrieri, F. Bonani, G. Ghione Politecnico di Torino, Dipartimento di Elettronica, Corso Duca degli Abruzzi 24, 10129 Torino, Italy, +390115644003, gabriele.conte-polito.it The small-signal (stationary) and the large-signal (cyclostationary) cases are both discussed. For the uniformly do

An Highly Integrated Double Conversion Mixer MMIC for Ka-band VSAT Communication Systems B. Lefebvre1, A. Bessemoulin1, C. Schwoerer2, V. Lehoue1 , O. Vaudescal1 1 United Monolithic Semiconductors, route départementale 128 ­ BP46, F-91401 Orsay Cedex, France email: benoit.lefebvre-ums-gaas.com ­ Ph. (33) 1 69 33 03 77 ­ Fax. (33) 1 69 33 05 52 2 Fraunhofer-Institute of Applied Solid State Physic

Carrier's transport mechanisms investigations in AlGaN/GaN HEMT thanks to physical modelling and low frequency noise measurements G. Soubercaze-Pun 1, J.G. Tartarin 1, L. Bary 1, S. Delage 2, R. Plana 1 , and J. Graffeuil1 1 LAAS-CNRS and Paul Sabatier University, 7 av. du Colonel Roche, 31077 Toulouse cedex 4, France Email: gsouberc-laas.fr ; Phone: 00-33-(0)5-61-33-69-09 2 THALES TIGER, Orsay,

Meeting the Needs of Cellular Dual-Mode (EGPRS/3G) Power Amplifiers with a Unique J-PHEMT Process and Novel Control Architecture J.C. Clifton, L.Albasha, A.Lawrenson, A.Eaton Sony SES, Jays Close, Viables, Basingstoke, Hampshire, RG22 4SB, United Kingdom Tel: +44 (0)1256 388727 Fax: +44 (0)1256 388703 Abstract Based upon a unique Junction-PHEMT device, a novel method of providing high efficiency P

A Medium-Power Low-Noise Amplifier For X-Band Applications F. Giannini1, E. Limiti1, A. Serino1, V. Dainelli2 1 Università di Roma "Tor Vergata", Dipartimento di Ingegneria Elettronica, via del Politecnico 1, 00133, Roma, Italy, phone +390672597342, fax +390672597343, e-mail: serino-uniroma2.it 2 Oerlikon Contraves S.p.A., via Affile 102, 00131, Roma, Italy. Abstract -- A monolithic front-end am