A Broadband, Small-Signal SiGe HBT Model for Millimeter-Wave Applications P. Sen1, H. -M. Park1, R. Mukhopadhyay1, N. Srirattana1, A. Raghavan2, J. Laskar1, J. D. Cressler1, and G Freeman3 1 School of Electrical and Computer Engineering, Georgia Institute of Technology 777 Atlantic Drive, NW, Atlanta, GA 30332 USA Email: psen-ece.gatech.edu 2 Quellan, Inc., Atlanta, GA 30318 USA 3 IBM Microele

Power Performance Evaluation of AlGaN/GaN HEMTs through Load Pull and Pulsed I-V Measurements C. Charbonniaud*, T. Gasseling*, S. De Meyer*, R. Quéré*, J.P. Teyssier*, D. Barataud*, J.M Nébus*, T. Martin**, B. Grimbert***, V. Hoel***, N. Caillas****, E. Morvan**** *IRCOM, CNRS UMR 6615, Université de Limoges, 19100 Brive, France **QINETIQ, Malvern Technology Centre, St. Andrews Road, Malvern, Worc

The Integrated 2W High Voltage/High Power 0.12-µm RF CMOS Power Amplifier L. Wu, R. Tao, U. Basaran, J. Luger, I. Dettmann, M. Berroth Institute of Electrical and Optical Communication Engineering, University of Stuttgart, Germany Pfaffenwaldring 47, D-70550 Stuttgart, Germany Tel: 49 711 685-7899 Fax: 49 711 6857900 Email: wu-int.uni-stuttgart.de Web: http://www.uni-stuttgart.de.int ABSTRACT -- A

Low-Cost Wide-Range Low-Current Consumption Linear HBT MMIC Power Amplifier for Portable 2.4GHz WLAN Applications Mikhail S. Shirokov, Eric S. Gray, Duncan A. Little, Gary Hau and James A. Roche Jr. Fairchild Semiconductor Corp., RF Group, 300 Potash Hill Rd. Unit A, Tyngsboro, MA, 01844 USA E-mail: Mikhail.Shirokov-fairchildsemi.com, Voice: (978) 226-2028 Abstract -- A low-cost, low-current consu

Dispersion Free Doped and Undoped AlGaN/GaN HEMTs on Sapphire and SiC Substrates M.C.J.C.M. Krämer, R.C.P. Hoskens, B. Jacobs1, J.J.M. Kwaspen, E.M. Suijker2, A.P. de Hek2, F. Karouta, L.M.F. Kaufmann Technische Universiteit Eindhoven, Department of Electrical Engineering, Inter-University Research Institute COBRA Opto-Electronic Devices Group, EH 8.16, P.O. Box 513, 5600 MB Eindhoven, The Netherl

A CDMA and AMPS Handset Power Amplifier based on Load Modulation Technique Joongjin Nam*, Youngwoong Kim**, Jin-Ho Shin**, and Bumman Kim* *Department of Electronic and Electrical Engineering and Microwave Application Research Center, Pohang university of Science and technology Kyungbuk, 790-784, Republic of Korea Tel:+82-54-279-5584, Fax:+82-54-279-2903, E-mail:pillar-postech.ac.kr ** Future comm

A Novel Low Cost Enhancement Mode Power Amplifier MMIC in SMT Package for 7 to 18 GHz Applications Kohei Fujii, Henrik Morkner, and Edward Brown Agilent Technologies, Inc. 350 W. Trimble Road, San Jose, California, 95131 USA Contact: Henrik Morkner, Phone: (408) 435-6513, FAX: (408)435-4801 email: henrik_morkner-agilent.com Abstract ­ This paper describes a novel power amplifier based on Enhancem

Nonlinear thermal reduced model for Microwave Circuit Analysis Christophe Chang1 , Rapha¨ l Sommet1 , Raymond Qu´ r´ 1 , Philippe Du^ me2 e ee e 1 IRCOM CNRS IUT GEII, 7, rue Jules Valles, Brive la Gaillarde, FRANCE, 19100, (+33)555-867301, (+33)555-861426 2 THALES AIRBORNE SYSTEMS, Elancourt, FRANCE, 78851 Cedex, (+33)134-817568 , (+33)134-817357 Electrical Model Vin Pdiss To+T Vout Load Abstra

A High Performance Yet Easy to Use Low Noise Amplifier in SMT Package for 6 to 20 GHz Low Cost Applications Khanhtran Phan and Henrik Morkner Agilent Technologies, Inc. 350 W. Trimble Road, San Jose, California, 95131 USA Contact: Henrik Morkner, Phone: (408) 435-6513, FAX: (408) 435-4801 email: henrik_morkner-agilent.com Abstract This paper describes a - groundbreaking 6-20 GHz Low Noise Amplifi

Large-Signal Nonlinear Model of a Highly Integrated Quad-Band GSM Transmit Front-End Module Y. Tkachenko, S. Boerman, H-C. Chung, P. DiCarlo, M. Gerard, J. Gering, J. Hu, A. Klimashov, K. Kwok, P. Reginella, S. Sprinkle, C. Wei and Y. Yang Skyworks Solutions, 20 Sylvan Road, Woburn, MA 01801, Gene.Tkachenko-skyworksinc.com Abstract A large-signal nonlinear model was developed for a highly integra