High-Performance CMOS-Compatible Micromachined Edge-Suspended Coplanar Waveguides on LowResistivity Silicon Substrate Lydia L. W. Leung1, Jinwen Zhang1,2, Wai Cheong Hon1, and and Kevin J. Chen1 1 Department of Electrical and Electronic Engineering, Hong Kong University of Science and Technology E-mail: eelydia-ee.ust.hk; Tel: (852) 2358 7082; Fax: (852) 2358 1485 2 Institute of Microelectronics

Optical Sensitivity of a Monolithic Integrated InP PIN-HEMT-HBT Transimpedance Amplifier A. Matiss1, G. Janssen2, R. M. Bertenburg2, W. Brockerhoff1, F.-J. Tegude1 1 University of Duisburg-Essen, Solid State Electronics Department, Lotharstrasse 55 / ZHO, D-47057 Duisburg, Germany, Phone: +49 (0)203 379-4605 2 IPAG-Innovative Processing AG, Lotharstrasse 55, D-47057 Duisburg, Germany, Phone:+49 (

Low Noise Amplifiers for 94 GHz Cloud Radar Mikko Kärkkäinen1, Mikko Varonen1, Mikko Kantanen2, Timo Karttaavi2, Pekka Kangaslahti1 and Kari Halonen1 1 Helsinki University of Technology, Electronic Circuit Design Laboratory, Espoo, P.O. Box 3000, FI-02015 HUT, Finland, Tel. +358 9 451 2276 2 Technical Research Center of Finland (VTT Information Technology), P.O. Box 1202, FI-02044 VTT, Finland we

Novel Organic SMD Package for High-Power Millimeter Wave MMICs M. van Heijningen1, J. Priday2 1 TNO Physics and Electronics Laboratory (TNO-FEL), Oude Waalsdorperweg 63, 2597 AK, The Hague, The Netherlands, email: M.vanHeijningen-fel.tno.nl 2 Labtech Limited, Broadaxe Business Park, Presteigne, LD8 2UH, United Kingdom, email: j.priday-labtech.ltd.uk II. PACKAGE TECHNOLOGY The package is construc

A Differential-Based Single-Ended 2 GHz Low-Noise Recursive Filter on Silicon Sébastien Darfeuille1, Bruno Barelaud1, Laurent Billonnet1, Bernard Jarry1, Hervé Marie2, Alain De La Torre2, Nguyen Trieu Luan Le2, Patrice Gamand2 1 IRCOM, University of Limoges, 123 Avenue Albert Thomas, 87060 Limoges Cedex, France 2 Innovation Centre RF, Philips Semiconductors, 2 rue de la girafe, 14079 Caen Cedex, F

Fully Differential 2 GHz 2.7V 4th-Order Low-Noise Active Bandpass Filter on Silicon Zoheir Sassi1, Bruno Barelaud1, Laurent Billonnet1, Bernard Jarry1, Hervé Marie2, Alain De La Torre2, Nguyen Trieu Luan Le2, Patrice Gamand2 1 2 IRCOM, University of Limoges, 123 Avenue Albert Thomas, 87060 Limoges Cedex, France Innovation Centre RF, Philips Semiconductors, 2 rue de la girafe, 14079 Caen Cedex, Fr

Analysis of Drain Lag and Power Compression in GaN MESFET K. Horio and K. Yonemoto Faculty of Systems Engineering, Shibaura Institute of Technology 307 Fukasaku, Minuma-ku, Saitama 337-8570, Japan Abstract -- Two-dimensional transient simulation of a GaN MESFET is performed in which deep levels in a semiinsulating buffer layer is considered. It is shown that the drain voltage VD is raised, the dra

Improvement in ACLR Asymmetry for W-CDMA InGaP/GaAs HBT Power Amplifier Koichi Kimura, Masato Seki, Nobuhisa Matsumura*, Kazuhiko Honjo University of Electro-Communications, Department of Information and Communication Engineering, 1-5-1 Chofugaoka, Chofushi, 182-8585 Japan * New Japan Radio Corporation, 2-1-1, fukuoka, kamifukuoka, 356-8510 Japan Abstract -- Asymmetry in Adjacent Channel Leakage p

Distributed Amplifiers for Transmitter and Receiver of a 40 Gbit/s DPSK Optical Transmission System B. Milivojevic1, S. Hoffmann1, A. Thiede1, R. Noé1, R. Leblanc 2, B. Wroblewski2 1 International Graduate School of Dynamic Intelligent Systems, University of Paderborn, Warburger Str. 100, 33098 Paderborn, Germany milivojevic-ont.upb.de 2 OMMIC, 22 Avenue Descartes B.P.11, 94453 Limeil-Brevannes C

Non-Linear Modeling of the Kink Effect in Deep Sub-micron SOI MOSFET Alexandre Siligaris, Gilles Dambrine, François Danneville : IEMN CNRS UMR 8520, Avenue Poincaré, BP 69, 59652 Villeneuve d'ASCQ, France e-mail: alexandre.siligaris-iemn.univ-lille1.fr tel: +33 (0)3 20 19 79 79, fax: +33 (0)3 20 79 78 92 Abstract -- Starting from an empirical non-linear model developed for deep sub-micron channel