A 1-Watt Ku-band Power Amplifier MMIC using Cost-effective Organic SMD Package A. Bessemoulin1, M. Parisot1, P. Quentin1, C. Saboureau2, M. van Heijningen3, J. Priday4 1 United Monolithic Semiconductors S.A.S, route départementale 128 ­ BP46, F-91401 Orsay Cedex ­ France 2 IRCOM CNRS-UMR 66-15, 123 avenue Albert Thomas, F-87100 Limoges, France 3 TNO Physic and Electronic Laboratory, Oude Waalsdor

A highly integrated GaAs MMIC UHF band demodulator with four tunable quadrature phase shift IF channels Stéphane ROCHETTE, Jean-François VILLEMAZET, Jean-Louis CAZAUX, Thierry POPULUS ALCATEL SPACE, 26 Av. JF Champollion, 31037 Toulouse cedex, France e-mail : stephane.rochette-space.alcatel.fr / Fax : +33 5 3435 6377 0° 0° 180° 90° 270° 0° 180° Abstract - A MMIC demodulator has been designed an

Anisotropic Conductive Adhesives for Millimeterwave Flipchip Interconnections Johann Heyen*, and Arne F. Jacob Institut für Hochfrequenztechnik, Technische Universität Braunschweig P/O 3329, 38023 Braunschweig, Germany Phone: +49-531-391-2002; Fax: +49-531-391-2045; Email: a.jacob-tu-bs.de *) Now with: EPCOS AG, Surface Acoustic Wave Components, Product Development Modules and Special Products, An

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A High Performance 2.4GHz Linear Power Amplifier in Enhancement-mode GaAs pHEMT Technology Yut-Hoong Chow and Thomas Chong Wireless Semiconductor Division, Agilent Technologies (Malaysia) Bayan Lepas Free Industrial Zone, 11900 Bayan Lepas Penang, Malaysia Tel: 60-4-6430611 Fax: 60-4-6423732 Email: yut-hoong_chow-agilent.com, thomas-ck_chong-agilent.com Abstract -- This paper describes the design

Table-Based Dynamic PHEMT Model Using Delayed Capacitive Currents C. J. Wei, A. Klimashov, J. Gering and Y. Tkachenko SKYWORKS SOLUTIONS INC. 20 Sylvan Road, Woburn, MA 01801,USA. Phone:+781-3763214, Email: Ce-Jun.Wei-skyworksinc.com Abstract -- A new table-based large-signal FET model using delayed capacitive currents is developed to account for nonquasi-static features of PHEMTs at high frequenc

Design Data for Hot-via Interconnects in Chip Scale Packaged MMICs up to 110 GHz Alexandre Bessemoulin, Senior Member, IEEE United Monolithic Semiconductors, route départementale 128 ­ BP46, 91401 Orsay Cedex, France email: alexandre.bessemoulin-ieee.org ­ Ph. (+33) 1.69.33.05.46 ­ Fax. (+33) 1.69.33.05.52 Abstract-- Theoretical and experimental design data for the modeling of bump- to hot-via int

Coplanar W-Band Low Noise Amplifier MMIC Using 100-nm Gate-length GaAs PHEMTs A. Bessemoulin1, Senior Member, IEEE, J. Grunenputt2, P. Fellon1, A. Tessmann3, E. Kohn4 1 United Monolithic Semiconductors S.A.S, route départementale 128 ­ BP46, 91401 Orsay Cedex, France 2 United Monolithic Semiconductors GmbH, Wilhelm Runge Strasse 11, D-89081 Ulm, Germany 3 Fraunhofer Institut Angewandte Festkörper

We present a large signal model for Si/SiGe HBTs using an Artificial Neural Network (ANN). The ANN is used to model the DC non-linearities of the intrinsic device. In this way, physical phenomena such as nonideal leakage currents and the Kirk effect can be modeled without time-consuming extraction. Capacitive nonlinearities are modeled by the well-known relationship between the capacitance and the

Measured Attenuation of Coplanar Waveguide on 6H, p-type SiC and High Purity Semi-Insulating 4H SiC through 800 K George E. Ponchak1, Zachary D. Schwartz2, Samuel A. Alterovitz1, and Alan N. Downey1 1. NASA Glenn Research Center, Cleveland, OH 44135, USA 2. Analex Corporation, NASA Glenn Research Center, Cleveland, OH 44135, USA Abstract -- Wireless sensors for high temperature applications such a