Distributed dielectric charging and its impact on RF MEMS devices X. Rottenberg 1, B. Nauwelaers 2, W. De Raedt 1 and H. A. C. Tilmans 1 1 2 IMEC v.z.w., Division MCP, Kapeldreef 75, B3001 Leuven, Belgium K.U.Leuven, ESAT, Kasteelpark Arenberg 10, B3001 Leuven, Belgium and the resulting vanishing of the pull-out bias that leads to an irreversible stiction as shown in Fig. 3. This paper gives a ne

RF Noise and Power Performances of AlGaN/GaN on Si(111) Substrates A. Minko1, V. Hoel1, G. Dambrine1, C. Gaquiere1 and J-C Dejaeger1 Y.Cordier2, F.Semond2, F.Natali2 and J.Massies2 H. Lahreche3, L. Wedzikowski3, R.Langer3, P.Bove3 THALES IEMN GaN Electronics Research (TIGER), University of Lille IEMN, U.M.R.-C.N.R.S. 8520, Cité scientifique, Avenue Poincaré ­ B.P. 69 59652 VILLENEUVE D'ASCQ CEDEX

A User Compiled Large Signal Model for GaAs Heterojunction Bipolar Transistors A. Issaoun1, A. B. Kouki1, F. M. Ghannouchi2 Ecole de technologie supérieure, département de génie électrique, 1100 Notre-Dame St. W., H3C 1K3, CANADA. (514) 396-8800 2 Ecole Polytechnique de Montréal, département de génie électrique, P.O. Box 6090, succ. Centre-ville, H3C 3A7, Canada. Abstract -- This paper presents a

Analytical Expressions for Distortion of SOI MOSFETs using the Volterra Series B. Parvais and J.-P. Raskin Microwave Laboratory, Universit´ catholique de Louvain ­ Place du Levant, 3 ­ B-1348 Louvain-la-Neuve, Belgium e Tel.: +32 (0)10 472310; fax : +32 (0)10 478705; e-mail : parvais-emic.ucl.ac.be Abstract-- The harmonic and intermodulation distortions of SOI MOSFETs are studied with the help of

Semi-Automated Experimental Set-Up for CAD-oriented Low Frequency Noise Modeling of Bipolar Transistors M.Borgarino1, A.Bogoni2, F.Fantini1, M.Peroni3, C.A.Cetronio3 1 University of Modena and Reggio Emilia, Dipartimento di Ingegneria dell'Informazione, Via Vignolese 905, 41100 Modena, Italy, +39 059 2056168 2 CNIT, Laboratorio Nazionale di Reti Fotoniche, Via Cisanello 145/147, 56124 Pisa, Italy

Submicrometer InAlAs/InGaAs Double-Gate HEMT's on Transferred Substrate N. Wichmann1, I. Duszynski1, T. Parenty1, S. Bollaert1, J. Mateos2, X. Wallart1, A. Cappy1 1 Institut d'Electronique, de Microélectronique et de Nanotechnologie U.M.R. CN.R.S. n°8520 Département Hyperfréquences et Semiconducteurs BP 69, 59652 Villeneuve d'Ascq Cedex, France Nicolas.wichmann-iemn.univ-lille1.fr 2 Departamento

A Monolithic HBT Broadband Amplifier Using Modified Triple Darlington Configuration Chin-Shen Lin1, Ming-Da Tsai1, Huei Wang1, Yu-Chi Wang2 and Chung-Hsu Chen2 1 Dept. of Electrical Engineering and Graduate Institute of Communication Engineering, National Taiwan University, Taipei, Taiwan, ROC E-mail: hueiwang-ew.ee.ntu.edu.tw Phone: 886-2-23635251 ext. 317, Fax: 886-2-23683824 2 WIN Semiconducto

A Miniature 4.3-7-GHz, 1-V CMOS LNA with Helical Inductors Ming-Da Tsai, Huei Wang, Jui-Feng Kuan*, Chih-Ping Chao* Department of Electrical Engineering and Graduate Institute of Communication Engineering, National Taiwan University, Taipei, Taiwan, R.O.C. Phone: +886-2-23635251 ext.317 Fax: +886-2-23638247 e-mail: hueiwang-ew.ee.ntu.edu.tw * Taiwan Semiconductor Manufacturing Corporation, Hsinchu

Millimetre-wave MMIC packaging compatible with surface-mount technology (SMT) J. Galière, J.L. Valard, E. Estèbe Thales Airborne Systems, 2, avenue Gay-Lussac 78851 ELANCOURT France Abstract --- This paper presents an interconnect and packaging solution for millimetre-wave MMIC, based on collective wiring and surface mount technologies. The designed structure consists of an SMT CSP (Chip Scale Pac

A 22-GHz Ultra Low Phase Noise Push-Push Dielectric Resonator Oscillator Using MMICs Hong-Yeh Chang1, Huei Wang1, Yu-Chi Wang2, Pane-Chane Chao2 and Chung-Hsu Chen2 Department of Electrical Engineering and Graduate Institute of Communication Engineering, National Taiwan University Taipei, Taiwan 10617, ROC, E-Mail: hueiwang-ew.ee.ntu.edu.tw TEL: 886-2-23635251 Ext 317, FAX: 886-2-23633824 2 WIN Se