110-GHz High-gain Flip-chip InP HEMT Amplifier with Resin Encapsulation on an Organic Substrate Satoshi Masuda1, Hidehiko Kira2, and Tatsuya Hirose1 FUJITSU LABORATORIES LTD. 10-1 Morinosato-Wakamiya, Atsugi 243-0197, Japan 2 FUJITSU LTD. 4-1-1 KAMIKODANAKA, NAKAHARA, KAWASAKI 211-8588, JAPAN Phone: +81-46-250-8244, Fax: +81-46-250-4337, Email: masuda-flab.fujitsu.co.jp Abstract -- A high-gain amp

Fabrication of Very High Performance 50nm T-gate metamorphic GaAs HEMTs with exceptional uniformity. E. Boyd , X. Cao, S. Thoms, D.A.J. Moran, K. Eglaid, M. Holland, C.R. Stanley, I. G. Thayne University of Glasgow, Ultrafast Systems Group, Department of Electronic and Electrical Engineering, Glasgow, G12 8LT, Scotland, United Kingdom. Now at University of Canterbury, Department of Electrical and

Accurate Characterization of S-Band HBT Power Amplifier using simultaneously S parameters and Load-Pull Measurements E.ChartierI ,S.PiotrowiczI, J.C.JacquetI, D.FloriotI, J.M.CoupatII, C.FrameryII ,P.EudelineII and P.AuxemeryIII. I : THALES Research & Technology - France, Domaine de Corbeville, 91404 Orsay, France. II : THALES AIR DEFENSE, 76520 Boos, France. III : United Monolithic Semiconductor

Low Phase Noise 2 GHz HBT Push-Push VCO Based on an Advanced Low Frequency Noise Model A. SION* - P. CORTESE* - C. GOURDON* - M. CAMIADE* - J.C. NALLATAMBY** M. PRIGENT** - J. OBREGON** UMS S.A.S., RD 128, BP 46, 91401 ORSAY CEDEX, FRANCE ** IRCOM ­ CNRS , 7 rue Jules Valles, 19100 BRIVE, France tel : + 0033 169330627 Fax : 0033 169330552 E-mail : arnaud.sion-ums-gaas.com ABSTRACT -- After investi

InP/GaAsSb/InP DHBT: Analysis of specific material parameters and high current effect by physical simulation C. Maneux1, M. Belhaj1, N. Labat1, A. Touboul1, M. Riet2, M. Kahn2, J. Godin2, Ph. Bove3 1 IXL, CNRS, Université Bordeaux 1, 351 Cours de la Libération, 33405 Talence, France, Phone: +33 5 4000 28 58 2 ALCATEL R&I - OPTO+, Route de Nozay, 91461 Marcoussis Cedex, France, Phone: +33 1 69 63

A Universal Large-Signal Model for Hetero Field Effect Transistors I. Kallfass*, C. Schick*, H. Schumacher*, T. J. Brazil** * Department of Electron Devices and Circuits, University of Ulm Albert-Einstein-Allee 45, 89069 Ulm, Germany ikall-ebs.e-technik.uni-ulm.de **Department of Electronic and Electrical Engineering University College Dublin, Dublin 4, Ireland Abstract-- The authors present an a

Chireix Power Combining with Saturated Class-B Power Amplifiers Ilkka Hakala1, Leila Gharavi2, Risto Kaunisto3 Nokia Research Center, P.O.Box 407, FIN-00045 NOKIA GROUP, Finland, Phone: +358504821553 Nokia Research Center, P.O.Box 407, FIN-00045 NOKIA GROUP, Finland, Phone: +358504837588 3 Nokia Research Center, P.O.Box 407, FIN-00045 NOKIA GROUP, Finland, Phone: +358504836772 2 1 Abstract -- Thi

Design Procedure and Performance of two 0.5-20 GHz GaAs PHEMT MMIC Matrix Distributed Amplifier for EW Applications Alessandro Lamesa1, Giancarlo Giolo1 , Ernesto Limiti2 1 Elettronica S.p.A., Microwave Dept., Via Tiburtina Valeria Km 13.700, 00131 Rome, Italy, +39-064154355 2 University of Rome "Tor Vergata", Dept. of Electronic Engineering, Via del Politecnico 1, 00133 Rome, Italy, +39-0672597

A Gold Free Fully Copper Metallized InGaP/GaAs HBT S.W. Chang, E. Y. Chang, K.S Chen, T. L. Hsieh, and C. W. Tseng National Chiao Tung University, Department of Materials Science and Engineering, 1001, Ta-Hsueh Rd., Hsin-chu 300, Taiwan, R.O.C., +886-3-5712121-52971 -- A gold-free, fully Cu metallized InGaP/GaAs HBT using platinum as the diffusion barrier has been successfully fabricated. The HBT

A Millimeter-Wave Linear Low Noise Amplifier in SiGe HBT Technology with Substrate Parasitic Model Anand Raghavan1 , Umesh Jalan1 , Sudipto Chakraborty1 , Chang-Ho Lee1 , Joy Laskar1 , Emery Chen1 , JongSoo Lee1 , John D. Cressler1 , Greg Freeman2 , and Alvin Joseph3 1 School of Electrical and Computer Engineering, Georgia Tech, 85 5th St., Atlanta, GA 30308 USA Telephone: 404 385-6010 2 IBM, Hop