LC-Oscillator for 94 GHz Automotive Radar System Fabricated in SiGe:C BiCMOS Technology Wolfgang Winkler, Johannes Borngräber IHP Microelectronics, Im Technologiepark 25, D-15236 Frankfurt (Oder), Germany, Phone: +49-(0)-335-5625-150 -- This paper presents the design and Abstract measurement of a voltage-controlled oscillator (VCO) for the use in a 94 GHz automotive radar system and other applica

Subharmonically Pumped Image Rejection Mixer for K-band Applications Moon-Que Lee1, Seong-Mo Moon1, Keun-Kwan Ryu2, Dong-Phil Jang3, In-Bok Yom3 1 University of Seoul, 90 Cheonnong-dong, Dongdaemun-gu, Seoul, 130-743, Korea 2 3 Hanbat National University, Daejon, Korea Electronics and Telecommunications Research Institute, Daejon, Korea II. CONFIGURATION OF THE BALANCED SUBHARMONIC IMAGE REJECT

A Distributed Model of Four-Port Monolithic Transformer Dong Ho Lee, Sangsoo Ko, Sang-Hoon Jeon1, Jae-Woo Park1, and Songcheol Hong Department of Electrical Engineering and Computer Science (EECS) Division of Electrical Engineering of Korea Advanced Institute of Science and Technology (KAIST) 373-1, Guseong-dong, Yuseong-gu, Daejeon, 305-701, Republic of Korea Tel: +82-42-869-8071 Fax: +82-42-869-

5-GHz VCO with a wide tuning range using an InPbased RTD/HBT technology Sunkyu Choi, Taeho Kim, Bangkeun Lee and Kyounghoon Yang Division of Electrical Engineering, Department of Electrical Engineering and Computer Science (EECS) Korea Advanced Institute of Science and Technology (KAIST) 373-1, Guseong-dong, Yuseong-gu, Daejon, 305-702, Republic of Korea Tel: +82-42-869-8071 Fax: +82-42-869-8560 A

A Fully Integrated 5.2 GHz Double Quadrature Image Rejection Gilbert Downconverter Using 0.35 µm SiGe HBT Technology Chinchun Meng1, Tzung-Han Wu1, Tse-Hung Wu1 and Guo-Wei Huang2 1 Department of Communication Engineering, National Chiao Tung University, Hsin-Chu, Taiwan, R.O.C. 2 National Nano Device Laboratories, Hsin-Chu, Taiwan, R.O.C. Differential RF and differential LO signals are fed exter

A 5.7 GHz 0.35 m SiGe HBT Upconversion Micromixer with a Matched Single-ended Passive Current Combiner Output Tzung-Han Wu1, Chinchun Meng1, Tse-Hung Wu1 and Guo-Wei Huang2 1 Department of Communication Engineering, National Chiao Tung University, Hsin-Chu, Taiwan, R.O.C. 2 National Nano Device Laboratories, Hsin-Chu, Taiwan, R.O.C. Q3 and common-emitter-biased transistor Q2 provide 180 degree ou

Comprehensive Characterization and Modelling of Micro-wave Power HEMTs for Large-Signal Power Amplifier Design David Denis1, Ian Hunter1 and Christopher M. Snowden2 1 University of Leeds, Institute of Microwaves & Photonics, School of Electronic & Electrical Engineering, LS2 9JT Leeds, United Kingdom 2 Filtronic Compound Semiconductors Ltd., DL5 6JW Newton Aycliffe, United Kingdom Abstract -- A

Extraction Of The Series-Resistance Of Au-Oxide-nInP Structures R. Touhami 1, M.C.E. Yagoub 1 2 and H. Baudrand 3 Laboratoire Instrumentation Dépt. Syst. Electroniques Faculté Génie Electrique, U.S.T.H.B. BP.32, Bab-Ezzouar, 16111 Alger, Algérie. E-mail : rtouhami-yahoo.fr 2 School of Information Technology and Engineering, University of Ottawa, 161 Louis-Pasteur, Ottawa, Ontario, Canada, K1N

Analysis of Temperature Dependence of GaAs DHBT Terminal Resistances Using the Observed Kink Effect C. N. Dharmasiri, V. T. Vo, K. A. Koon, A. A. Rezazadeh The Electromagnetic Centre, Dept of Electrical Engineering and Electronics, The University of Manchester, Manchester, PO BOX 88, M60 1QD, UK dependence of specific contact resistance in metal/n+(or p+)- GaAs contacts and from the temperature de

50nm T-gate lattice-matched InP HEMTs with fT of 430GHz using a non-annealed ohmic contact process D.A.J. Moran, E. Boyd, K.Elgaid, H. McLelland, C.R. Stanley, I.G. Thayne Ultrafast Systems Group, Nanoelectronics Research Centre, Dept. of Electronics and Electrical Engineering, The University of Glasgow, Glasgow, G12 8LT Tel: +44 (0)141 330 6131 Abstract -- A 50nm T-gate lattice-matched InP HEMT t