Enhancing the Device Performance of III-V Based Bipolar Transistors C. R. Lutz1, P. M. Deluca1, K. S. Stevens1, B. E. Landini1, R. E. Welser1, R. J. Welty2, P. M. Asbeck2 1 Kopin Corporation, 695 Myles Standish Blvd., Taunton, Ma 02780 2 University of California, San Diego, La Jolla, Ca 92093-0407 Email:clutz-kopin.com; Phone:(508)-824-6696; FAX:(508)-824-6958 ABSTRACT Superior DC and RF performa

InGaP Power HBTs : Basic power cells for High Power Transistors D. Floriot*, E. Chartier, N. Caillas, S. Delage, JC Jacquet, S. Piotrowicz Thales Research and Technology, Domaine de Corbeville, 91404 Orsay France * didier.floriot-thalesgroup.com Abstract ­Power HBT Technology offers today the best compromise for high power ­ high efficiency amplifiers up to Ku band. Many improvements have been pub

Using HBT BiCMOS Differential Structures at Microwaves in SiGe Technologies H. Bazzi, S. Bosse, L. Delage, B. Barelaud, L. Billonnet, B. Jarry I.R.C.O.M.- UMR CNRS n°6615 ­ 87060 LIMOGES Cedex, France ­ gary-ircom.unilim.fr This paper discusses the use of differential structures for active functions at microwaves. Starting from the example of a single-ended LNA structure, we show the advantages of

Very Wideband Automated On-Wafer Noise Figure And Gain Measurements At 50-110 T. Vähä-Heikkilä, M. Lahdes, M. Kantanen,T. Karttaavi, and J. Tuovinen MilliLab, VTT Technical Research Center of Finland, P.O. Box 1202, 02044 VTT, Finland, Tel. 35894567219, Fax 35894567013, email: tauno.vaha-heikkila-vtt.fi On-wafer noise figure and insertion gain measurement set-ups have been developed over 50-110 G

A Calibrated Time Domain Envelope Measurement System for the Behavioral Modeling of Power Amplifiers T. Reveyrand, C. Mazière, J.M. Nébus, R. Quéré, A. Mallet*, L. Lapierre*, J. Sombrin* IRCOM, UMR CNRS 6615 ­ 123 Avenue Albert-Thomas 87060 LIMOGES Cédex * CNES, 18 Avenue Edouard-Belin, 31055 TOULOUSE Cédex e-mail : tibo-ircom.unilim.fr This paper presents a set-up which enables the generation and

Direct Observation of Gain Compression Mechanisms in PHEMT by RF Gate and Drain Currents C. C. Meng, A. S. Peng*, S. Y. Wen* and G. W. Huang * Department of Communication Engineering, National Chiao Tung University, Hsin-Chu, Taiwan, R.O.C., *National Nano Device Laboratories, Hsin-Chu, Taiwan, R.O.C. Average rf gate and drain currents can be used to determine gain compression mechanisms for PHEMT

Determination of FET noise parameters from 50 noise figure measurements using a distributed noise model M.C. Maya, A. Lázaro and L. Pradell, Member, IEEE Universitat Politècnica de Catalunya (UPC), Dept. TSC, Campus Nord UPC ­ Mòdul D3, 08034 Barcelona ­ Spain, fax: +34-93-4017232, email: mcmaya-tsc.upc.es; lazaro-tsc.upc.es; pradell-tsc.upc.es Abstract ­ A method for measuring FET noise paramete

NON-LINEAR DISTORTION ANALYSIS OF Ka BAND MMIC's UNDER SINGLE-TONE, TWO-TONE AND NPR EXCITATIONS. Christophe Gaquière*, Damien Ducatteau*, Pascal Delemotte*, Yves Crosnier*, Sylvie Tranchant** and Bernard Carnez** Institut d'Electronique et de Microélectronique du Nord, IEMN, UMR CNRS 8520, Département Hyperfréquences et Semiconducteurs Av.Poincaré, BP 69, 59652 Villeneuve d'Ascq, France; Tel : 33

A Simple Parallel-Plate Resonator Technique for Microwave Characterization of Thin Resistive Films A. Vorobiev1 , A. Deleniv1, V. Talanov2, 3 , and S. Gevorgian1, 4 Department of Microelectronics MC-2, Chalmers University of Technology, 41296 Gothenburg, Sweden, andrei.vorobyev-ep.chalmers.se, anatoli-ep.chalmers.se, spartak-ep.chalmers.se 2 IPM RAS, N. Novgorod, GSP-105, 603600, Russia Neocera, I

Diffusion behavior of delta-doped Si in InAlAs/InP heterostructures Hiroki Sugiyama*, Haruki Yokoyama, Kazuo Watanabe, and Takashi Kobayashi NTT Photonics Laboratories, NTT Corporation, 3-1, Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan *Electronic mail: sugiyama-aecl.ntt.co.jp Diffusion behavior of delta-doped Si in InAlAs and InP was studied by using secondary ion mass spectroscopy.