RF-MEMS uniplanar 180º Phase Switch based on switching between two out-of-phase paths Marco Antonio Llamas1, David Girbau2, Miquel Ribó3, Lluís Pradell4, Antonio Lázaro2, Flavio Giacomozzi5, Benno Margesin5 Baolab Microsystems, Ctra. N-150, Km 14.5, 08220 Terrassa, Spain Automatics, Electronics and Electrical Department, Universitat Rovira i Virgili, 43007 Tarragona, Spain 3 Department of Electron

Modeling of Dielectric Charging in MEMS Capacitive Switches George Papaioannou1,2,3, Fabio Coccetti1,2,4, and Robert Plana1,2 CNRS ; LAAS, 7 avenue du Colonel Roche, F-31077, Toulouse, France Universite de Toulouse; UPS, INSA, INP, ISAE, LAAS ; F-31077, Toulouse, France 3 Physics Dpt., University of Athens, Athens, Panepistimiopolis Zografos, Athens, 15784, Greece 4 Novamems, 10 av. De l' Europe,

Advances in MEMS Capacitive Switch Technology Charles L. Goldsmith, Sean O'Brien, and Derek Scarbrough MEMtronics Corporation Plano, Texas, USA cgoldsmith-memtronics.com Abstract ­ This article overviews improvement in RF MEMS switch robustness against environmental changes and adverse operating conditions. Implementation of molybdenum mechanical membranes have demonstrated a very low change over

BiCMOS Embedded MEMS Modules: MEMS-IC Integration M. Kaynak1, K. E. Ehwald1, J. Drews1, K. Schulz1, F. Korndörfer1, C. Wipf1, R. Scholz1, B. Tillack1,2 2 IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany Technische Universität Berlin, HFT4, Einsteinufer 25, 10587 Berlin, Germany H H H 1 Tel: (+49) 335 5625 707, Fax: (+49) 335 5625 327, Email: kaynak-ihp-microelectronics.com H Abstrac

A Novel Surface Micro-machined Voltage Comparator for Mixed Signal Operation in MEMS Sensor Subha Chakraborty Dept. of Electronics and Electrical Communication Engineering IIT Kharagpur Kharagpur, India subharpe-gmail.com Tarun K. Bhattacharyya Dept. of Electronics and Electrical Communication Engineering IIT Kharagpur Kharagpur, India tkb-ece.iitkgp.ernet.in In [1]-[6], development of such eleme

Integrated RF-MEMS for GaN-based MMICs F. Crispoldi#1, S. Lavanga#1, A. Pantellini#1, L.Venturelli#1, P. Romanini#1, A. Nanni#1, P. Farinelli#3, L.Rizzi#2 and C. Lanzieri#1 #1 SELEX Sistemi Integrati S.p.A, Via Tiburtina Km.12,400, Rome 00131, Italy #2 Consorzio Optel Via Tagliamento 45, 00198 Rome, Italy #3 Universita' di Perugia, DIEI, Via G. Duranti 93, Perugia 06125, Italy Corresponding autho

High Isolation T-switch for reconfigurable switching Matrix N. Torres Matabosch 1,2, F. Coccetti1,2, R.Plana1,2, B.Reig3 and JL. Cazaux4 LAAS-CNRS, 7 Avenue Colonel Roche, F-31077 Toulouse, France Université de Toulouse ; UPS, INSA, INP, ISAE ; LAAS ; F-31077 Toulouse, France 3 CEA, LETI, MINATEC, F-38054 Grenoble, France 4 Thales Alenia Space, 26 Avenue Jean-François Champollion, 31037 Toulouse,

GaAs MMIC based RF MEMS Switches for Highly Integrated Switched LNA Redundancy Networks R. Malmqvist#1, C. Samuelsson#2, P. Rantakari1, H.Zirath§1, D. Smith£1, T. Vähä-Heikkilä2, and R. Baggen*1 # FOI Swedish Defence Research Agency, Olaus Magnus väg 42, SE-583 30, Linköping, Sweden 1 robert.malmqvist-foi.se, 2carl.samuelsson-foi.se VTT Technical Research Institute of Finland, Espoo, Finland 1 P

Integrated RF MEMS/CMOS Devices R. R. Mansour, S. Fouladi and M. Bakeri-Kassem University of Waterloo Waterloo, Ontario, Canada Abstract- A maskless post-processing technique for CMOS chips is developed that enables the fabrication of RF MEMS devices with parallel-plate structure including tunable capacitors with a high quality factor and a very compact size and capacitive RF MEMS switches. Simula

Reliability Investigation of Stress-Compensated Metal-Coated Monocrystalline-Silicon Membranes for MEMS Tuneable High-Impedance Surfaces Mikael Sterner , Dmitry Chicherin , Antti V. Räisänen , Göran Stemme and Joachim Oberhammer Technology Lab, KTH ­ Royal Institute of Technology SE-100 44 Stockholm, Sweden, Email: msterner-kth.se Dept. of Radio Science and Engineering / SMARAD, Aalto University