EM Modelling, Design and Manufacturing of a ZeroLevel Package for RF-MEMS applications H. El Gannudi1, P. Farinelli1, I. Pieper2, R. Sorrentino1 1 University of Perugia, Dept. of Electronic and Information Engineering, Via G. Duranti, 93, 06125 Perugia, Italy hamza.ghannudi-diei.unipg.it 2 Fraunhofer Institute for Silicon Technology ISIT, D-25524 Itzehoe, Germany. isa.pieper-isit.fraunhofer.de 55

Forced OFF-State for Switching Reliability of Low Actuation Voltage RF MEMS Electrostatic Switch N. Lorphelin1*, A-S. Rollier*, S. Touati*, C. Pavageau*, R. Robin*, A. Kanciurzewski* and K. Segueni* * DelfMEMS SAS, 5 rue Héloïse - Haute Borne, 59650 Villeneuve d'Ascq, France 1 nicolas.lorphelin-delfmems.com Abstract-- RF MEMS switch with low-voltage actuation is feasible by lowering the gap bet

A Broad-Band Microwave Scanning Probe Microscope Marco Farina1, IEEE Senior Member , Andrea di Donato1, Silvia Fabiani1,2,3, Agnese Lucesoli1, Tamara Monti1, Davide Mencarelli1, Giuseppe Venanzoni1, Antonio Morini1, IEEE Senior Member, Tullio Rozzi1, IEEE Life Fellow. 1 Dipartimento di Bioingegneria, Elettronica e Telecomunicazioni, Università Politecnica delle Marche, Via Brecce Bianche, Ancona,

Influence of Oxidised High-Resistivity Silicon on the Loss and Phase Velocity of CPW RFMEMS Till Feger 1 , Tatyana Purtova #1 , Thomas Lisec 2 , Naser Pour Aryan 3 , Chao Chu 1 and Hermann Schumacher 1 1 Institute of Electron Devices and Circuits, Ulm University, Albert-Einstein-Allee 45, D-89081 Ulm, Germany # tatyana.purtova-uni-ulm.de Fraunhofer Institute for Silicon Technology, Fraunhoferst

Recent activity of RF-MEMS development in Japan Tamotsu Nishino, Masatake Hangai Information Technology R&D Center Mitsubishi Electric Corporation Kanagawa, Japan Sang-Seok Lee Advanced Technology R&D Center Mitsubishi Electric Corporation Hyogo, Japan Abstract--This paper introduces recent research and development activities of RF-MEMS in Japan. The activities cover R&D in national project, ind

Investigation of Power-Handling Capability of Conventional and Novel All-Silicon RF-MEMS Phase Shifters N. Somjit, G. Stemme, J. Oberhammer Microsystem Technology Laboratory, School of Electrical Engineering KTH-Royal Institute of Technology Stockholm, Sweden nutapong.somjit-ee.kth.se Abstract--The main problem of MEMS phase shifters, known for excellent linearity and low loss, is their limited po

Design of a Wide Tuning Range Filtering LNA For Wireless Applications based on Tunable MEMS Inductor L. Collot, J. Lintignat, B. Barelaud, B. Jarry XLIM UMR 6172, Université de Limoges/CNRS 123, Avenue Albert Thomas 87060 Limoges Cedex, France B. Viala, D. Morche, P. Michel CEA-LETI 17, rue des Martyrs 38054 Grenoble Cedex 9, France Abstract--This paper deals with the evaluation of tunable MEMS

High Q Tunable Cavity using Air-MEMS Varactors Romain Stefanini*, Matthieu Chatras*, Arnaud Pothier*, Jean-Christophe Orlianges#, Pierre Blondy* *XLIM ­UMR n°6172- Université de Limoges/CNRS, 123, rue Albert Thomas, 87060 Limoges Cedex ­FRANCE# SPCTS ­UMR n°6638- Université de Limoges/CNRS, 123, rue Albert Thomas, 87060 Limoges Cedex ­FRANCE- Abstract--This paper presents experimental results of

RF modeling and characterization of RF-MEMS switches for reconfigurable reflectarray applications A.Takacs1,2, T. Idda1,2, S. Aouba1,2, H.Aubert1,2, P. Pons1,2, E. Girard3 LAAS, CNRS, 7, avenue du Colonel Roche, F-31077 Toulouse, France University of Toulouse, UPS, INSA, INP, ISAE, LAAS F-31077 Toulouse, France Email: atakacs-laas.fr, tidda-laas.fr, saouba-laas.fr, haubert-laas.fr, ppons-laas.fr 3

Electro-Mechanical Characterization of the Dynamic Behavior of Ohmic RF-MEMS Switches A. Tazzoli*, M. Barbato, F. Mattiuzzo, V. Ritrovato, G. Meneghesso (1) * University of Padova, Department of Information Engineering, Via Gradenigo 6/b, 35100, Padova, Italy Corresponding author: Augusto Tazzoli, e-mail: augusto.tazzoli-dei.unipd.it, Tel: +39 049 827 7664 large, with the sacrificial layer etched